Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv. Electron. Mater. 4/2023)
نویسندگان
چکیده
Metal–Oxide–Semiconductors In article number 2201110 by Tae-Sik Yoon and coworkers, a tunable multilevel gate oxide capacitance flat-band voltage shift characteristics in double-floating-gate metal-oxidesemiconductor capacitors are demonstrated as operating with both conducting filament formation electrical charging the stack, depending on constituent materials device geometries. It paves way for potential application to non-volatile memory programmable logic devices.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202370021